Бусыгин Александр Николаевич

Heading:

Physico-mathematical modeling

Author:

Alexander N. Busygin

About author:

Cand. Sci. (Phys.-Math.), Senior Scientific Researcher, Nanomaterials and Nanoelectronics Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; a.n.busygin@utmn.ru, https://orcid.org/0000-0002-3439-8067

Articles:

2016, Vol. 2. №1

Features of Simulation of a Biomorphic Neural Network on Electronic Device with Non-Volatile Memory and Low Power Consumption

Alexander N. Busygin
2016, Vol. 2. №4

Logical Commutator and a Storage Device Based on Memristor Cells for Electrical Circuits of Neuroprocessor

Alexander N. Busygin
2017, Vol. 3. №4

Combined Memristor-Diode Crossbar as a Memory Storage Base

Alexander N. Busygin
2019, Vol. 5. №2

Increase of switching range of resistive memristor for realization of a greater number of synaptic states in a neuroprocessor

Alexander N. Busygin
2019, Vol. 5. №4 (20)

Materials selection and fabrication nanotechnology of the composite memristor-diode crossbar — the basis of neuroprocessor hardware implementation

Alexander N. Busygin
2020. Vol. 6. № 3 (23)

The study of the electrophysical properties of a composite memristor-diode crossbar as a basis of the neuroprocessor hardware implementation

Alexander N. Busygin
2020. Vol. 6. № 4 (24)

Simulation of information decoding processes in the output device of the biomorphic neuroprocessor

Alexander N. Busygin
2021. Vol. 7. № 2 (26)

Numerical simulation and experimental study of a hardware pulse neural network with memristor synapses

Alexander N. Busygin
2021. Vol. 7. № 4 (28)

Thermophysical model of a memristor-diode microchip

Alexander N. Busygin
2022. Vol. 8. № 2 (30)

Mathematical modeling of memristor resistive switching based on mass transfer full model of oxygen vacancies and ions

Alexander N. Busygin
2023. Vol. 9. № 2 (34)

Compact multifilament model of resistive switching metal-oxide memristor

Alexander N. Busygin
2024. Vol. 10. No. 3 (39)

A nonstationary model of mass transfer of oxygen vacancies and trapped electrons for determination of temperature influence on properties of a metal oxide memristor

Alexander N. Busygin
2025. Vol. 11. No. 2 (42)

The effect of oxygen ions and vacancies generation and recombination processes on heat and mass transfer and electrophysical properties of metal oxide memristor

Alexander N. Busygin
2025. Vol. 11. No. 4 (44)

Computational efficiency of memristor models in the hardware spiking neural network synaptic array simulation

Alexander N. Busygin