Combined Memristor-Diode Crossbar as a Memory Storage Base

Tyumen State University Herald. Physical and Mathematical Modeling. Oil, Gas, Energy


Release:

2017, Vol. 3. №4

Title: 
Combined Memristor-Diode Crossbar as a Memory Storage Base


For citation: Pisarev A. D., Busygin A. N., Bobylev A. N., Udovichenko S. Yu. 2017. “Combined Memristor-Diode Crossbar as a Memory Storage Base”. Tyumen State University Herald. Physical and Mathematical Modeling. Oil, Gas, Energy, vol. 3, no 4, pp. 142-149. DOI: 10.21684/2411-7978-2017-3-4-142-149

About the authors:

Alexander D. Pisarev, Cand. Sci. (Tech.), Associate Professor, Department of Applied and Technical Physics, Institute of Physics and Technology, Head of Laboratory of Beam-Plasma Technologies, Nanotechnologies Research and Teaching Center, University of Tyumen; spcb.doc@gmail.com

Alexander N. Busygin, Postgraduate Student, Department of Experimental Physics and Nanotechnology, University of Tyumen; daenur.al@gmail.com

Andrey N. Bobylev, Postgraduate Student, Department of Experimental Physics and Nanotechnology, University of Tyumen; andreaubobylev@gmail.com

Sergey Yu. Udovichenko, Dr. Sci. (Phys-Math.), Professor, Department of Experimental Physics and Nanotechnology, Head of REC “Nanotechnology”, Tyumen State University; udotgu@mail.ru

Abstract:

This article presents the topology and manufacturing technology of the composite crossbar. A new electronics component includes an active memristive layer and a semiconductor layer of Zener diode. The layers and conductors can be manufactured in a simple industrial way — in a magnetron technological module. Simulation of the write operation in the cells of the composite crossbar shows that application of Zener diode improves energy efficiency. The new electronics component allows to create planar and 3D ultra large memory devices which can be part of a neuromorphic processor.

References:

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