Computational efficiency of memristor models in the hardware spiking neural network synaptic array simulation

Tyumen State University Herald. Physical and Mathematical Modeling. Oil, Gas, Energy


Release:

2025. Vol. 11. № 4 (44)

Title: 
Computational efficiency of memristor models in the hardware spiking neural network synaptic array simulation


For citation: Busygin, A. N., & Udovichenko, S. Yu. (2025). Computational efficiency of memristor models in the hardware spiking neural network synaptic array simulation. Tyumen State University Herald. Physical and Mathematical Modeling. Oil, Gas, Energy, 11(4), 136–155 https://doi.org/10.21684/2411-7978-2025-11-4-136-155

About the authors:

Alexander N. Busygin, Cand. Sci. (Phys.-Math.), Senior Scientific Researcher, Nanomaterials and Nanoelectronics Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; a.n.busygin@utmn.ru, https://orcid.org/0000-0002-3439-8067

Sergey Yu. Udovichenko, Dr. Sci. (Phys.-Math.), Professor, Department of Applied and Tech­nical Physics, School of Natural Sciences, University of Tyumen, Tyumen, Russia; Scientific Director of the Memristive Materials Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; udotgu@mail.ru, https://orcid.org/0000-0003-3583-7081

Abstract:

To accelerate and reduce the cost of developing neuromorphic devices using memristors, simulation is essential. Unlike detailed physical and mathematical models of memristors, which require extensive calculation time due to the large number of partial differential equations, compact models containing a reduced number of equations exist. Due to the large number of memristors in synaptic arrays of hardware neural networks, memristor models must meet increased computational efficiency requirements to reduce calculation time. In this study, numerical simulations using the LTspice electrical circuit simulator were conducted to study the accuracy of reproducing the experimental current-voltage characteristics and the calculation time of models using smooth and piecewise linear functions. Model accuracy was quantified using the mean squared error, root mean squared error, and determination coefficient. Computation time was estimated by averaging over ten simulations of synaptic arrays with varying cell counts. For a model using smooth functions, an optimal number of parameters was found that yields the smallest deviation between the model and experimental current-voltage curves. Based on the balance between accuracy and computation time for simulating synaptic arrays in a hardware spiking neural network, piecewise linear memristor models were shown to be the most computationally efficient.

References:

Udovichenko, S. Yu., Busygin, A. N., Ebrahim, A. Kh. A., Pisarev, A. D., & Shulaev, N. A. (2025). Performance and accuracy of compact circuit models of memristors on smooth and table functions. Nanoindustry, 18(S11-2), 459–464. EDN: TCZOMJ [In Russian]

Al Chawa, M. M., de Benito, C., & Picos, R. (2018). A simple piecewise model of reset/set transitions in bipolar ReRAM memristive devices. IEEE Transactions on Circuits and Systems I: Regular Papers, 65(10), 3469–3480. https://doi.org/10.1109/TCSI.2018.2830412

Amador, A., Freire, E., Ponce, E., & Ros, J. (2017). On discontinuous piecewise linear models for memristor oscillators. International Journal of Bifurcation and Chaos, 27(06), 1730022. https://doi.org/10.1142/S0218127417300221

Asapu, S., & Maiti, T. (2017). Multifilamentary conduction modeling in transition metal oxide-based RRAM. IEEE Transactions on Electron Devices, 64(8), 3145–3150. https://doi.org/10.1109/TED.2017.2709249

Biolek, D., Di Ventra, M., & Pershin, Y. V. (2013). Reliable SPICE simulations of memristors, memcapacitors and meminductors. Radioengineering, 22(4) 945. https://doi.org/10.48550/arXiv.1307.2717

Busygin, A. N., Udovichenko, S. Y., Neustroev, A. A., Ebrahim, A. H., & Maevsky, O. V. (2025). Circuit-level model of the memristor based on piecewise linear functions derived from experimental electrical characteristics. IEEE Transactions on Electron Devices, 72(8), 4537–4543. https://doi.org/10.1109/TED.2025.3582217

Chee, H. L., Kumar, T. N., & Almurib, H.  A. (2018). Multifilamentary conduction modelling of bipolar Ta2O5/TaOx Bi-layered RRAM. Proceedings of 2018 IEEE 7th Non-Volatile Memory Systems and Applications Symposium (NVMSA) (August 28–31, Hakodate, Japan) (pp. 113–114). IEEE.

Chee, H. L., Kumar, T. N., & Almurib, H. A. F. (2019). Electrical model of multi-level bipolar Ta2O5/TaOx Bi-layered ReRAM. Microelectronics Journal, 93, 104616. https://doi.org/10.1016/j.mejo.2019.104616

Chua, L. (2003). Memristor-The missing circuit element. IEEE Transactions on circuit theory, 18(5), 507–519. https://doi.org/10.1109/TCT.1971.1083337

Demin, V. A., Ilyasov, A. I., Rylkov, V. V., Kashkarov, P. K., & Kovalchuk, M. V. (2023). Model of multifilamentary resistive switching for a memristor with hopping conductivity. Nanobiotechnology Reports, 18(2), 305–317. https://doi.org/10.1134/S2635167623700180

El Mesoudy, A., Lamri, G., Dawant, R., Arias-Zapata, J., Gliech, P., Beilliard, Y., Ecoffey, S., Ruediger, A., Alibart, F., & Drouin, D. (2022). Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing. Microelectronic Engineering, 255, 111706. https://doi.org/10.1016/j.mee.2021.111706

Fan, Y., Huang, X., Wang, Z., & Li, Y. (2018). Nonlinear dynamics and chaos in a simplified memristor-based fractional-order neural network with discontinuous memductance function. Nonlinear Dynamics, 93(2), 611–627. https://doi.org/10.1007/s11071-018-4213-2

Getachew, M. N., Priyadarshini, R., & Mehra, R. M. (2021). SPICE model of HP-memristor using PWL window function for neuromorphic system design application. Materials Today: Proceedings, 34, 598–603. https://doi.org/10.1016/j.matpr.2020.01.540

Gismatulin, A. A. Voronkovskii, V. A., Kamaev, G. N., Novikov, Y. N., Kruchinin, V. N., Krivyakin, G. K., Gritsenko, V. A., Prosvirin, I. P., & Chin, A. (2020). Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor. Nanotechnology, 31(50), 505704. https://doi.org/10.1088/1361-6528/abb505

González-Cordero, G., Roldan, J. B., Jiménez-Molinos, F., Suñé, J., Long, S., & Liu, M. (2016). A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach. Semiconductor Science and Technology, 31(11), 115013. https://doi.org/10.1088/0268-1242/31/11/115013

Hossen, I., Anders, M. A., Wang, L., & Adam, G. C. (2022). Data-driven RRAM device models using Kriging interpolation. Scientific Reports, 12(1), 5963. https://doi.org/10.1038/s41598-022-09556-4

Karakulak, E., & Mutlu, R. (2020). SPICE model of current polarity-dependent piecewise linear window function for memristors. Gazi University Journal of Science, 33(4), 766–777. https://doi.org/10.35378/gujs.605118

Koehl, A., Wasmund, H., Herpers, A., Guttmann, P., Werner, S., Henzler, K., Du, H., Mayer, J., Waser, R., & Dittmann, R. (2013). Evidence for multifilamentary valence changes in resistive switching SrTiO3 devices detected by transmission X-ray microscopy. APL Materials, 1(4), 042102. https://doi.org/10.1063/1.4822438

Li, Y., Xie, L., Xiao, P., Zheng, C., & Hong, Q. (2023). Drift speed adaptive memristor model. Neural Computing and Applications, 35(19), 14419–14430. https://doi.org/10.1007/s00521-023-08401-7

Martyshov, M. N., Emelyanov, A. V., Demin, V. A., Nikiruy, K. E., Minnekhanov, A. A., Nikolaev, S. N., Taldenkov, A. N., Ovcharov, A. V., & Presnyakov, M. Yu. (2020). Multifilamentary character of anticorrelated capacitive and resistive switching in memristive structures based on (Co-Fe-B)x(LiNbO3)100−x Nanocomposite. Physical Review Applied, 14(3), 034016. https://doi.org/10.1103/PhysRevApplied.14.034016

Matsukatova, A. N. Vdovichenko, A. Yu., Patsaev, T. D., Forsh, P. A., Kashkarov, P. K., Demin, V. A., & Emelyanov, A. V. (2023). Scalable nanocomposite parylene-based memristors: Multifilamentary resistive switching and neuromorphic applications. Nano Research, 16(2), 3207–3214. https://doi.org/10.1007/s12274-022-5027-6

Messaris, I., Tetzlaff, R., Ascoli, A., Williams, R. S., Kumar, S., & Chua, L. (2020). A simplified model for a NbO2 Mott memristor physical realization. Proceedings of 2020 IEEE International Symposium on Circuits and Systems (ISCAS) (October 12–14, Seville, Spain) (pp. 1–5). IEEE. https://doi.org/10.1109/ISCAS45731.2020.9181036

Miranda, E., Mehonic, A., Suñé, J., & Kenyon, A. J. (2013). Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory. Applied Physics Letters, 103(22), 222904. https://doi.org/10.1063/1.4836935

Morozov, A. Y., Abgaryan, K. K., & Reviznikov, D. L. (2022). Interval model of a memristor crossbar network. Physica Status Solidi (b), 259(11), 2200150. https://doi.org/10.1002/pssb.202200150

Omar, E., Aly, H. H., Hassan, O. E., & Fedawy, M. (2024). Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model. Journal of Computational Electronics, 23(6), 1455–1472. https://doi.org/10.1007/s10825-024-02223-z

Pacheco-Sanchez, A., Jordán-García, O., Ramírez-García, E., & Jiménez, D. (2023). Static and small-signal modeling of radiofrequency hexagonal boron nitride switches. IEEE Journal of the Electron Devices Society, 11, 658–664. https://doi.org/10.1109/JEDS.2023.3268349

Patterson, G. A., Suñé, J., & Miranda, E. (2018). SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions. International Journal of Circuit Theory and Applications, 46(1), 39–49. https://doi.org/10.1002/cta.2419

Pisarev, A., Busygin, A., Udovichenko, S., & Maevsky, O. (2018). 3D memory matrix based on a composite memristor-diode crossbar for a neuromorphic processor. Microelectronic Engineering, 198, 1–7. https://doi.org/10.1016/j.mee.2018.06.008

Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008). The missing memristor found. Nature, 453(7191), 80–83. https://doi.org/10.1038/nature06932

Yang, H., Wang, Z., Guo, X., Su, H., Sun, K., Yang, D., Xiao, W., Wang, Q., & He, D. (2020). Controlled growth of fine multifilaments in polymer-based memristive devices via the conduction control. ACS Applied Materials & Interfaces, 12(30), 34370–34377. https://doi.org/10.1021/acsami.0c07533

Yousuf, O., Hossen, I., Daniels, M. W., Lueker-Boden, M., Dienstfrey, A., Adam, G. C. (2023). Device modeling bias in ReRAM-based neural network simulations. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 13(1), 382–394. https://doi.org/10.1109/JETCAS.2023.3238295

Zhevnenko, D. A., Meshchaninov, F. P., Kozhevnikov, V. S., Shamin, E. S., Telminov, O. A., & Gornev, E. S. (2021). Research and development of parameter extraction approaches for memristor models. Micromachines, 12(10), 1220. https://doi.org/10.3390/mi12101220

Zhuo, Y., Midya, R., Song, W., Wang, Z., Asapu, S., Rao, M., Lin, P., Jiang, H., Xia, Q., Williams, R. S., & Yang, J. J. (2022). A dynamical compact model of diffusive and drift memristors for neuromorphic computing. Advanced Electronic Materials, 8(8), 2100696. https://doi.org/10.1002/aelm.202100696