Ибрагим Абдулла Хайдар Абдо

About author:

Cand. Sci. (Phys.-Math.), Junior Researcher, Memristive Materials Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; abdulla.ybragim@mail.ru, https://orcid.org/0000-0002-1709-9882

Articles:

• 2019, Vol. 5. №2

  Increase of switching range of resistive memristor for realization of a greater number of synaptic states in a neuroprocessor

  Abdulla H. Ebrahim
• 2019, Vol. 5. №4 (20)

  Materials selection and fabrication nanotechnology of the composite memristor-diode crossbar — the basis of neuroprocessor hardware implementation

  Abdulla H. Ebrahim
• 2020. Vol. 6. № 2 (22)

  Mathematical modeling of resistive states and dynamic switching of a metal oxide memristor

  Abdulla H. Ebrahim
• 2020. Vol. 6. № 4 (24)

  Simulation of information decoding processes in the output device of the biomorphic neuroprocessor

  Abdulla H. Ebrahim
• 2021. Vol. 7. № 1 (25)

  Forecasting electric consumption of the enterprise using artificial neural networks

  Abdulla H. Ebrahim
• 2022. Vol. 8. № 2 (30)

  Mathematical modeling of memristor resistive switching based on mass transfer full model of oxygen vacancies and ions

  Abdulla H. Ebrahim
• 2022. Vol. 8. № 4 (32)

  Algorithms for building and operation modeling of large electrical circuits with memristor-diode crossbars in a biomorphic neuroprocessor

  Abdulla H. Ebrahim
• 2023. Vol. 9. № 2 (34)

  Compact multifilament model of resistive switching metal-oxide memristor

  Abdulla H. Ebrahim
• 2024. Vol. 10. No. 3 (39)

  A nonstationary model of mass transfer of oxygen vacancies and trapped electrons for determination of temperature influence on properties of a metal oxide memristor

  Abdulla H. Ebrahim