Compact multifilament model of resistive switching metal-oxide memristor

About the authors:

Abdulla H. Ebrahim, Cand. Sci. (Phys.-Math.), Junior Researcher, Memristive Materials Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; abdulla.ybragim@mail.ru, https://orcid.org/0000-0002-1709-9882

Alexey A. Gubin, Postgraduate Student, Department of Applied and Technical Physics, Engineer, REC “Nanotechnology”, University of Tyumen; a.a.gubin@utmn.ru

Alexander N. Busygin, Cand. Sci. (Phys.-Math.), Associate Professor, Department of Applied and Technical Physics, School of Natural Sciences, University of Tyumen, Tyumen, Russia; Senior Researcher, Memristive Materials Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; a.n.busygin@utmn.ru, https://orcid.org/0000-0002-3439-8067

Sergey Yu. Udovichenko, Dr. Sci. (Phys.-Math.), Professor, Department of Applied and Tech­nical Physics, School of Natural Sciences, University of Tyumen, Tyumen, Russia; Scientific Director of the Memristive Materials Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; udotgu@mail.ru, https://orcid.org/0000-0003-3583-7081

Abstract:

A fairly simple compact circuit multifilament resistive switching model of a metal-oxide memristor with controlled multilevel conductance tuning is presented, which is in demand for self-training of large arrays of memristor synapses and information processing using them. A good agreement between the calculated and measured volt-ampere characteristics and the pulse-time dependent plasticity curve is shown.

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