Release:
2021. Vol. 7. № 4 (28)About the authors:
Maxim V. Sozonov, Postgraduate Student, Department of Applied and Technical Physics, University of Tyumen; m.v.sozonov@yandex.ru; ORCID: 0000-0003-1232-0389Abstract:
The most popular models of memristor, based on the principle of formation and breakage of conductive filaments in memristive layer, are applied to consideration of a single memristor. However, consideration of a full-fledged microchip with many memristors may be also interesting. In this case, it is very important to determine the thermal mode of work of the device, in particular, to determine if it needs cooling and how the microchip architecture affects on the nature of heat transfer. At the same time, the proposed model should be quite simple, since modeling of conductive filaments in each memristor greatly complicates work with the model and requires large computational resources.
In this paper a thermophysical model of the microchip based on a memristor-diode crossbar created at the REC “Nanotechnology” at Tyumen State University is presented. The model takes into account Joule heating and convective heat transfer. A feature of the model is a simplified determination of memristor state by the resistivity value of memristive layer from the data of the current-voltage characteristic of a real memristor sample. Simulation is carried out in the ANSYS software package. Within the framework of the model, self-consistent electrical and thermophysical problems are solved in a non-stationary setting. The temperature fields and graphs of the temperature versus time were obtained for various operating modes. The results obtained are in good agreement with similar data from other studies published in the literature. The model shows itself well in various operating modes, both in modes with memristor state switching process and without it. The presented model can be used at the design stage to take into account the features of the microchip architecture, which can significantly affect the thermal state of microchip operating modes.
References:
Alekseeva L. G., Ivanov A. S., Luchinin V. V., Petrov A. A., Tikeu T., Nabatame T. 2016. “Memristor — the new nanoscale element of multilevel neuromorphic logic”. Biotechnosphere, no. 3-4, pp. 45-46. [In Russian]
Belavin A. A. 2019. “Analysis and assessment of the market for devices based on memristors”. Young scientist, no. 19 (257), pp. 105-107. [In Russian]
Vasiliev V. A., Chernov P. S. 2014. “Mathematical modeling of memristor in the presence of noise”. Mathematical Modeling, vol. 26, no. 1, pp. 122-132. [In Russian]
Ebrahim A. H., Udovichenko S. Yu. 2020. “Mathematical modeling of resistive states and dynamic switching of a metal oxide memristor”. Tyumen State University Herald. Physical and Mathematical Modeling. Oil, Gas, Energy, vol. 6, no. 2 (22), pp. 127-144. DOI: 10.21684/2411-7978-2020-6-2-127-144 [In Russian]
Kislitsyn A. A., Kuzmenko A. Yu., Sozonov M. V. 2020. “Investigation of temperature conditions of microcircuit with memristor cells”. Questions of technical and physical and mathematical sciences in the light of modern research: collection of articles by materials of 27th int. scientific-practical conf., no. 5 (21), pp. 91-98. [In Russian]
Matsukatova A. N., Emelyanov A. V., Minnekhanov A. A., Demin V. A., Rylkov V. V., Forsh P. A., Kashkarov P. K. 2020. “Second-order nanoscale thermal effects in memristive structures based on poly-p-xylylene”. JETP Letters, vol. 112, no. 6, pp. 357-363. DOI: 10.1134/S0021364020180071 [In Russian]
Palagushkin A. N., Yudkin F. A., Prokopenko S. A., Sergeev A. P. 2018. “Technology of memristors”. Electronic engineering. Series 3. Microelectronics, no. 2 (170), pp. 20‑26. [In Russian]
Starostin A. A., Shleymovich E. M., Lisienko V. G. 2016. Special temperature measurements. Yekaterinburg: UrFU. 168 p. [In Russian]
Teplov G. S., Gornev E. S. 2019. “Multilevel bipolar memristor model considering deviations of switching parameters in the Verilog-A language”. Russian Microelectronics, vol. 48, no. 3, pp. 163-175. DOI: 10.1134/S1063739719030107 [In Russian]
ANSYS in Russia and the CIS. CAE Expert. ANSYS Icepak. Accessed on 1 September 2021. https://cae-expert.ru/product/ansys-icepak [In Russian]
Bhavani P., Kamaraju M., Venkata L. 2017. “Mathematical modelling and analysis of memristors with and without its temperature effects”. International Journal of Electronics and Telecommunications, vol. 63, no. 2, pp. 181-186. DOI: 10.1515/eletel-2017-0024
Borghetti J., Strukov D. B., Pickett M. D., Yang J. J., Stewart D. R., Williams S. R. 2009. “Electrical transport and thermometry of electroformed titanium dioxide memristive switches”. Journal of Applied Physics, vol. 106, no. 12. DOI: 10.1063/1.3264621
Burzo M., Komarov P., Raad P. 2006. “Noncontact transient temperature mapping of active electronic devices using the thermoreflectance method”. IEEE Transactions on Components and Packaging Technologies, vol. 28, no. 4, pp. 637-643. DOI: 10.1109/TCAPT.2005.859738
Chua L. O. 1971. “Memristor — the missing circuit” IEEE Trans. Circuit Theory, vol. CT-18, no. 5, pp. 507-519.
Gao X., Mamaluy D., Mickel P. R., Marinella M. 2015. “Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors”. ECS Transactions, vol. 69, no. 5, pp. 183-193. DOI: 10.1149/06905.0183ecst
Jeetendra S., Balwinder R. 2018. “Temperature dependent analytical modeling and simulations of nanoscale memristor”. Engineering Science and Technology, an International Journal, vol. 21, no. 5, pp. 862-868. DOI: 10.1016/j.jestch.2018.07.016
Pahinkar D. G., Basnet P., West M. P., Zivasatienraj B., Weidenbach A., Doolittle A. W., Vogel E., Graham S. 2020. “Experimental and computational analysis of thermal environment in the operation of HfO2 memristors”. AIP Advances, vol. 10, no. 3. DOI: 10.1063/1.5141347
Pisarev A., Busygin A., Bobylev A., Gubin A., Udovichenko S. 2021. “Fabrication technology and electrophysical properties of a composite memristor-diode crossbar used as a basis for hardware implementation of a biomorphic neuroprocessor”. Microelectronic Engineering, vol. 236. DOI: 10.1016/j.mee.2020.111471
Shen W., Kumar S., Kumar S. 2021. “Experimentally calibrated electro-thermal modeling of temperature dynamics in memristors”. Applied Physics Letters, vol. 118, no. 10. DOI: 10.1063/5.0039797
Strachan J. P., Strukov D. B., Borghetti J., Yang J. J., Medeiros-Ribeiro G., Williams S. R. 2011. “The switching location of a bipolar memristor: chemical, thermal and structural mapping”. Nanotechnology, vol. 22, no. 25. DOI: 10.1088/0957-4484/22/25/254015
Strukov D. B., Snider G. S., Stewart D. R., Williams R. S. 2008. “The missing memristor found”. Nature, vol. 453, pp. 80-83.
