Numerical modeling of radiation exposure on a quartz crystal structure defects and signal analysis thermoluminescent

About the authors:

Vladimir S. Sheinkman, Cand. Sci. (Geogr.); Leading Researcher, Institute of Earth Cryosphere of Tyumen Scientific Center Siberian Branch of the Russian Academy of Sciences; v.s.shejnkman@utmn.ru

Yuliya Yu. Erina, Master Student, University of Tyumen; Research Engineer, Institute of Earth Cryosphere of Tyumen Scientific Center Siberian Branch of the Russian Academy of Sciences; erina.yulya@inbox.ru; ORCID: 0000-0002-8577-1044

Oleg A. Simonov, Cand. Sci. (Phys.-Math.), Deputy Director, Tyumen Scientific Center of the Siberian Branch of the Russian Academy of Sciences; eLibrary AuthorID, ORCID, Scopus AuthorID, s_o_a@ikz.ru

Abstract:

Developing thermoluminescent (TL) dating methods for quartz-containing deposits has required a series of numerical experiments within the framework of the band model to study the rate of electron accumulation in quartz crystal structure defects under radioactive radiation. The crystal model contained two different types of electron traps and one emission center. A system of differential equations was solved numerically, relating the rates of change in the electron concentration in defects of the crystal structure and the electron concentration in the conduction band and holes in the valence band.

The results have shown that the intense radiation exposure alters the dynamic equilibrium concentration of electrons in the traps, which significantly modifies the TL signal. In accordance with this, the sensitivity marker material to the radioactive dose, required for absolute dating and received by its intense radiation exposure, cannot be determined correctly. In addition, the numerical experiments have confirmed the possibility of dating the samples by the position of the TL signal’s maximum on the time axis, as well as the possibility of obtaining the dating by the TL signal’s amplitude.

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