Combined Memristor-Diode Crossbar as a Memory Storage Base

About the authors:

Alexander D. Pisarev, Cand. Sci. (Tech.), Associate Professor, Department of Applied and Technical Physics, Head of Laboratory of Beam-Plasma Technologies, SEC “Nanotechnologies”, University of Tyumen; eLibrary AuthorID, ORCID, Scopus AuthorID, spcb.doc@gmail.com

Alexander N. Busygin, Postgraduate Student, Department of Applied and Technical Physics, Reseacher Laboratory Assistant, REC “Nanotechnology”, University of Tyumen; eLibrary AuthorID, ScopusID, a.n.busygin@utmn.ru; ORCID: 0000-0002-3439-8067

Andrey N. Bobylev, Head of the Laboratory of Electronic and Probe Microscopy. REC “Nanotechnology”, University of Tyumen; eLibrary AuthorID, ScopusID, andreaubobylev@gmail.com; ORCID: 0000-0001-5488-8736

Sergey Yu. Udovichenko, Dr. Sci. (Phys.-Math.), Professor of Department of Applied and Technical Physics; Head of REC “Nanotechnology”, University of Tyumen; eLibrary AuthorID, ResearcherID, ScopusID, udotgu@mail.ru

Abstract:

This article presents the topology and manufacturing technology of the composite crossbar. A new electronics component includes an active memristive layer and a semiconductor layer of Zener diode. The layers and conductors can be manufactured in a simple industrial way — in a magnetron technological module. Simulation of the write operation in the cells of the composite crossbar shows that application of Zener diode improves energy efficiency. The new electronics component allows to create planar and 3D ultra large memory devices which can be part of a neuromorphic processor.

References:

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