Logical Commutator and a Storage Device Based on Memristor Cells for Electrical Circuits of Neuroprocessor

About the authors:

Oleg V. Maevsky, Сand. Sci. (Tech.), Director of “Nanodevices” company; oleg-maevsky@yandex.ru

Alexander D. Pisarev, Cand. Sci. (Tech.), Associate Professor, Department of Applied and Technical Physics, School of Natural Sciences, University of Tyumen, Tyumen, Russia; Senior Researcher, Memristive Materials Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; spcb.doc@utmn.ru, https://orcid.org/0000-0002-5602-3880

Alexander N. Busygin, Cand. Sci. (Phys.-Math.), Associate Professor, Department of Applied and Technical Physics, School of Natural Sciences, University of Tyumen, Tyumen, Russia; Senior Researcher, Memristive Materials Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; a.n.busygin@utmn.ru, https://orcid.org/0000-0002-3439-8067

Sergey Yu. Udovichenko, Dr. Sci. (Phys.-Math.), Professor, Department of Applied and Tech­nical Physics, School of Natural Sciences, University of Tyumen, Tyumen, Russia; Scientific Director of the Memristive Materials Laboratory, Center for Nature-Inspired Engineering, University of Tyumen, Tyumen, Russia; udotgu@mail.ru, https://orcid.org/0000-0003-3583-7081

Abstract:

The topology and the circuit diagram of memristor cells obtained by integrating memristor, diodes and CMOS platform are presented. Such cells can be used as a commutator for logic elements and storage devices that allows to create a microcontroller and a neuroprocessor with non-volatile memory, high performance and low power consumption. The substitution in logic field-effect transistors to memristor significantly reduces the area of active elements on the chip of the microcontroller and simplifies circuit programming.

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